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| 2N2905A 2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications. 2N2905A approved to CECC 50002-100, 2N2906A approved to CECC 50002-103 available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb 25 C for 2N2905A for 2N2907A at T case 25 o C for 2N2905A for 2N2907A St orage Temperature Max. Operating Junction Temperature o Value -60 -60 -5 -0.6 0.6 0.4 3 1.8 -65 to 200 200 Unit V V V A W W W W o o T stg Tj C C 1/7 November 1997 2N2905A/2N2907A THERMAL DATA T O-39 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 58.3 292 TO -18 97.3 437.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.5V) Base Cut-off Current (V BE = -0.5V) Test Cond ition s V CB = -50 V V CB = -50 V V CE = -30 V V CE = -30 V I C = -10 A -60 Tc ase = 150 C o Min. Typ . Max. -10 -10 -50 -50 Un it nA A nA nA V V ( BR)CBO Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) V CE(sat ) V BE(s at) hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = -10 mA -60 V I E = -10 A -5 V I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA IC IC IC IC IC = = = = = -0.1 mA -1 mA -10 mA -150 mA -500 mA IB = -15 mA IB = -50 mA IB = -15 mA IB = -50 mA V CE V CE V CE V CE V CE = -10 V = -10 V = -10 V = -10 V = -10 V 75 100 100 100 50 200 -0.4 -1.6 -1.3 -2.6 V V V V 300 MHz 30 8 10 40 80 30 45 100 pF pF ns ns ns ns ns ns fT C EBO C CBO t d t r t s t f t on t off Transition F requency Emitter Base Capacitance Collector Base Capacitance Delay Time Rise Time Storage Time Fall T ime Turn-on T ime Turn-off T ime V CE = -50 V I C = -20 mA IC = 0 IE = 0 f = 100 MHz f = 1MHz f = 1MHz V EB = -2 V V CB = -10 V V CC = -30 V I B1 = -15 mA V CC = -30 V I B1 = -15 mA I C = -150 mA I C = -150 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA V CC = -30 V I B1 = -15 mA I C = -150 mA V CC = -6 V I C = -150 mA I B1 = -IB2 = -15 mA Pulsed: Pulse duration = 300 s, duty cycle 1 % See test circuit 2/7 2N2905A/2N2907A Normalized DC Current Gain. Collector-emitter Saturation Voltage. Collector-base and Emitter-base capacitances. Switching Characteristics. 3/7 2N2905A/2N2907A Test Circuit for ton, tr, td. PULSE GENERATOR : tr 2.0 ms Frequency = 150 Hz Zo = 50 TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 10 M Test Circuit for toff, to, tf. PULSE GENERATOR : tr 2.0 ns Frequency = 150 Hz Zo = 50 TO OSCILLOSCOPE : tr < 5.0 ns ZIN > 100 M 4/7 2N2905A/2N2907A TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 5/7 2N2905A/2N2907A TO-39 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 5.08 1.2 0.9 45o (typ.) 12.7 0.49 6.6 8.5 9.4 0.200 0.047 0.035 TYP. MAX. MIN. 0.500 0.019 0.260 0.334 0.370 TYP. MAX. inch D G I H E F A L B P008B 6/7 2N2905A/2N2907A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 7/7 |
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